TSM600N25E

TSM600N25E 250V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on)(max) Qg 250 0.6 8.4 Unit V Ω nC Features ● 100% avalanche tested ● Improved ESD performance Ordering Information Part No. Package Packing TSM600N25ECH C5G TO-251 75pcs / Tube TSM600N25ECP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation @ TC = 25oC Peak Diode Recovery (Note 3) Operating Junction Temperature Storage Temperature Range Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Tc = 25ºC Tc = 100ºC Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ TSTG Symbol RӨJC RӨJA Block Diagram N-Channel MOSFET Limit 250 ±30 8 3.6 32 147 8 5.2 52 4.5 150 -55 to +150 Limit 2.4 110 Unit V V A A A mJ A mJ W V/ns ºC oC Unit oC/W 1/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET Electrical Specifications (Tc=25oC unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate ...