TSM600P03CS

TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 90 Qg 5.1 Unit V mΩ nC Ordering Information Part No. Package Packing TSM600P03CS RLG SOP-8 2.5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25oC Tc=25ºC Tc=100ºC VGS ID IDM PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Thermal Resistance - Junction to Ambient Symbol RӨJA P-Channel MOSFET Limit -30 ±20 -4.7 -3 -18.8 2.1 150 -55 to +150 Limit 50 Unit V V A A A W ºC oC Unit oC/W 1/5 Version: A14 TSM600P03CS 30V P-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = -250µA VGS = -10V, ID = -3A VGS = -4.5V, ID = -2A BVDSS -30 -- -- V -- 44 60 RDS(ON) mΩ -- 73 90 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.2 -1.6 -2.5 V Zero Gate Voltage Drai...