TSM60N03

TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V ID (A) 60 Features ● Advanced Trench Technology ● Low RDS(ON) 4.5mΩ (Max.) ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulsed * TC = 70℃ TA = 25℃ TA = 70℃ ID IDM Avalanche Current, L = 0.1mH IAS, IAR Avalanche Energy, L = 0.1mH EAS, EAR Maximum Power Dissipation TC = 25℃ TC = 70℃ TA = 25℃ PD TA = 70℃ Storage Temperature Range TSTG Operating Junction Temperature Range TJ * Limited by maximum junction temperature Limit 30 ±20 60 48 19 15 140 38 72 41 26 2.5 1.6 -55 to +150 -55 to +150 Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 3 50 Unit V V A A A mJ W ℃ ℃ Unit ℃/W ℃/W 1/4 Version: A12 TSM60N03 30V N-Channel Power MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance...