TSM60N900

ITO-220 TO-252 (DPAK) TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.9 9.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG Block Diagram N-Channel MOSFET Limit ITO-220 IPAK/DPAK 600 ±30 4.5 13.5 20 50 81 1.8 - 55 to +150 Unit V V A A W mJ A °C 1/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Symbol RӨJC RӨJA Limit ITO-220 IPAK/DPAK 6.25 2.5...