P-Channel Power MOSFET
TSM650P02CX
20V P-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
P...
Description
TSM650P02CX
20V P-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS VGS =- 4.5V
RDS(on) (max) VGS = -2.5V VGS = -1.8V
-20 65 85 130
Qg 6.4
Unit V
mΩ
nC
Features
● Fast switching ● Suited for -1.8V gate drive applications ● Halogen-free
Ordering Information
Part No.
Package
Packing
TSM650P02CX RFG SOT-23
3kcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25℃ Operating Junction Temperature Storage Temperature Range
TC = 25°C TC = 100°C
VDS VGS
ID
IDM PD TJ TSTG
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Ambient
RӨJA
Limit -20 ±10 -4.1 -2.6 -16.4 1.56 150
-55 to +150
Limit 80
Unit V V A A A W °C °C
Unit °C/W
1/5 Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = -250µA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1.5A VDS = VGS, ID = -250µA
BVDSS RDS(on) VGS(TH)
-20...
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