TSM650P02CX

TSM650P02CX 20V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 65 85 130 Qg 6.4 Unit V mΩ nC Features ● Fast switching ● Suited for -1.8V gate drive applications ● Halogen-free Ordering Information Part No. Package Packing TSM650P02CX RFG SOT-23 3kcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram P-Channel MOSFET Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25℃ Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA Limit -20 ±10 -4.1 -2.6 -16.4 1.56 150 -55 to +150 Limit 80 Unit V V A A A W °C °C Unit °C/W 1/5 Version: A14 TSM650P02CX 20V P-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = -250µA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1.5A VDS = VGS, ID = -250µA BVDSS RDS(on) VGS(TH) -20...