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TSM650P03CX Dataheets PDF



Part Number TSM650P03CX
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description P-Channel Power MOSFET
Datasheet TSM650P03CX DatasheetTSM650P03CX Datasheet (PDF)

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 10V RDS(on) (max) VGS = -4.5V VGS = -2.5V -30 65 75 100 Qg 8 Unit V mΩ nC Features ● Fast Switching ● Suited for -2.5V Gate Drive Applications ● Halogen-free Ordering Information Part No. Package Packing TSM650P03CX RFG SOT-23 3kcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm ch.

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TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 10V RDS(on) (max) VGS = -4.5V VGS = -2.5V -30 65 75 100 Qg 8 Unit V mΩ nC Features ● Fast Switching ● Suited for -2.5V Gate Drive Applications ● Halogen-free Ordering Information Part No. Package Packing TSM650P03CX RFG SOT-23 3kcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25℃ Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM PD TJ TSTG Thermal Performance Parameter Thermal Resistance - Junction to Ambient Symbol RӨJA P-Channel MOSFET Limit -30 ±12 -4.1 -2.6 -16.4 1.56 150 -55 to +150 Limit 80 Unit V V A A A W °C °C Unit °C/W 1/5 Version: A14 TSM650P03CX 30V P-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Source Charge (Note 2,3) Gate-Drain Charge (Note 2,3) VGS = 0V, ID = -250µA VGS = -10V, ID = -4A VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VDS = VGS, ID = -250µA VDS = -30V, VGS = 0V VDS = -24V, TJ = 125°C VGS = ±12V, VDS = 0V VDS = -10V, ID = -3A VDS = -15V, ID = -4A, VGS = -4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz Switching Turn-On Delay Time (Note 2,3) Turn-On Rise Time (Note 2,3) Turn-Off Delay Time (Note 2,3) Turn-Off Fall Time (Note 2,3) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω Source-Drain Diode Ratings and Characteristic BVDSS RDS(on) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf -30 -- -- V -- 55 65 -- 65 75 mΩ -- 85 100 -0.4 -0.7 -0.9 V -- -- -1 µA -- -- -10 -- -- ±100 nA -- 5.4 -- S -- 8 --- 1.9 -- nC -- 1.4 --- 810 --- 85 -- pF -- 50 -- -- 5.4 --- 19.4 --- 45.9 --- 12.4 -- ns Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in IS -- -- -4.1 A Maximum Pulse Drain-Source Diode the MOSFET Forward Current ISM -- -- -16.4 A Diode-Source Forward Voltage Note: VGS = 0V, IS = -1A VSD 1. Pulse width limited by safe operating area 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 3. Switching time is essentially independent of operating temperature. -- -- -1 V 2/5 Version: A14 Electrical Characteristics Curve Continuous Drain Current vs. TC TSM650P03CX 30V P-Channel Power MOSFET Normalized RDS(on) vs. TJ Normalized On Resistance (mW) -ID, Continuous Drain Current (A) TC, Case Temperature (°C) Threshold Voltage vs. Junction Temperature TJ, Junction Temperature (°C) Gate Charge Waveform -VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) TJ, Junction Temperature (°C) Normalized Thermal Transient Impedance Curve Qg , Gate Charge (nC) Maximum Safe Operating Area -ID, Continuous Drain Current (A) Normalized Thermal Response (RθJA) Square Wave Pulse Duration (s) -VDS, Drain to Source Voltage (V) 3/5 Version: A14 TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram 63 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A14 TSM650P03CX 30V P-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A14 .


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