TSM70N1R4

7 TSM70N1R4 Taiwan Semiconductor N-Channel Power MOSFET 700V, 3.3A, 1.4Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 700 V 1.4 Ω 7.7 nC TO-251 (IPAK) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG 700 ±30 3.3 2.0 9.9 38 64 1.6 - 55 to +150 UNIT V V A A W mJ A °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 3.3 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000136 1 Version: B15 7 TSM70N1R4 Taiwan Semicondu...