N-Channel Power MOSFET
TSM70N600
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6Ω
FEATURES
● Super-Junction technology ● High perfo...
Description
TSM70N600
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6Ω
FEATURES
● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance
APPLICATION
● Power Supply ● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
700 V 0.6 Ω 12.6 nC
ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ITO-220
IPAK/DPAK
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM PDTOT EAS
IAS TJ, TSTG
700 ±30
8 4.8 24 32 83 100 2 - 55 to +150
UNIT V V
A
A W mJ A °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL ITO-220 IPAK/DPAK UNIT
Junction to Case Thermal Resistance
RӨJC
3.9
1.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000138
1
Version: ...
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