TSM70N900

ITO-220 TO-252 (DPAK) TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 700 0.9 9.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Block Diagram Ordering Information Part No. Package Packing TSM70N900CI C0G ITO-220 50pcs / Tube TSM70N900CH C5G TO-251 75pcs / Tube TSM70N900CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TC=25oC Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) TC = 25oC Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG N-Channel MOSFET Limit ITO-220 IPAK/DPAK 700 ±30 4.5 13.5 20 50 64 1.6 - 55 to +150 Unit V V A A W mJ A oC 1/9 Version: C14 TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Symbol RӨJC RӨJA Limit ITO-220 IPAK/DPAK 6.25 2.5 62...