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VS-VSKL230-12PBF Dataheets PDF



Part Number VS-VSKL230-12PBF
Manufacturers Vishay
Logo Vishay
Description SCR/SCR and SCR/Diode
Datasheet VS-VSKL230-12PBF DatasheetVS-VSKL230-12PBF Datasheet (PDF)

www.vishay.com VS-VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A MAGN-A-PAK PRODUCT SUMMARY IT(AV) Type Package Circuit 230 A Modules - Thyristor, Standard MAGN-A-PAK Two SCRs doubler circuit FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Desig.

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www.vishay.com VS-VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A MAGN-A-PAK PRODUCT SUMMARY IT(AV) Type Package Circuit 230 A Modules - Thyristor, Standard MAGN-A-PAK Two SCRs doubler circuit FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) IT(RMS) ITSM 85 °C 50 Hz 60 Hz 50 Hz I2t 60 Hz I2√t VDRM/VRRM TJ Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGE TYPE NUMBER CODE VS-VSK.230- 08 12 16 18 20 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 800 1200 1600 1800 2000 VALUES 230 510 7500 7850 280 260 280 800 to 2000 -40 to 130 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 1700 1900 2100 UNITS A kA2s kA2√s V °C IRRM/IDRM AT 130 °C MAXIMUM mA 50 Revision: 17-Jul-14 1 Document Number: 93053 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-VSK.230..PbF Series Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state non-repetitive, surge current SYMBOL IT(AV) IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2√t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms t = 8.3 ms 100 % VRRM reapplied Sinusoidal half wave, t = 10 ms No voltage initial t = 8.3 ms reapplied TJ = TJ maximum t = 10 ms t = 8.3 ms 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum ITM = π x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C Anode supply = 12 V, resistive load = 1 Ω, gate pulse: 10 V, 100 μs, TJ = 25 °C VALUES 230 85 510 7500 7850 6300 6600 280 256 198 181 2800 1.03 1.07 0.77 0.73 1.59 500 1000 UNITS A °C A kA2s kA2√s V mΩ V mA SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL td tr tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω VALUES 1.0 2.0 50 to 150 UNITS μs BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s TJ = TJ maximum, exponential to 67 % rated VDRM VALUES 50 3000 1000 UNITS mA V V/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGT Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that willnot trigger Maximum rate of rise of turned-on current IGT VGD IGD dI/dt TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum TJ = - 40 °C TJ = 25 °C TJ = TJ maximum Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = - 40 °C TJ = 25 °C TJ = TJ maximum Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A, rated VDRM .


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