1.0A GLASS PASSIVATED FAST RECOVERY DIODE
WTE
POWER SEMICONDUCTORS
FR101G – FR107G Pb
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Glass Passivated Die ...
Description
WTE
POWER SEMICONDUCTORS
FR101G – FR107G Pb
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability
AB
A
Mechanical Data
! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41 Dim Min Max
A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol FR101G FR102G FR103G FR104G FR105G FR106G FR107G Unit
VRRM VRWM
VR
50 100 200 400 600 800 1000 V
VR(RMS) 35 70 140 280 420 560 700 V
IO 1.0 A
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