ST 8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for...
ST 8050 (1.5A)
NPN Silicon Epitaxial Planar
Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.
The
transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the
PNP transistor ST 8550 is recommended.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 25 40 6 1 1.5 100 1 150
-55 to +150
Unit V V V A A mA W OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
ST 8050 (1.5A)
Characteristics at Tamb=25 OC
DC Current Gain at VCE=1V, IC=5mA at VCE=1V, IC=100mA
at VCE=1V, IC=800mA Collector Cutoff Current
at VCB=35V Emitter Cutoff Current
at VBE=6V Collector Saturation Voltage
at IC=800mA, IB=80mA Base Saturation Voltage
at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage
at IC=2mA Collector Base Breakdown Voltage
at IC=100µA Emitter Base Breakdown Voltage
at IE=100µA Base Emitter Voltage
at IC=10mA, VCE=1V Gain Bandwidth Product
at VCE=10V, IC=50mA Collector Base Capacitance
at VCB=10V, f=1MHz
Symbol
8050C 8050D
hFE ...