Document
NEW PRODUCT
DSS5240V
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • "Green Device" (Note 2)
Top View
Bottom View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Repetitive Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current
Mechanical Data
• Case: SOT-563 • Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.003 grams (approximate)
1, 2, 5, 6 3
654
4
Device Schematic
123 Pin Out Configuration
Symbol
VCBO VCEO VEBO
IC ICRP ICM
IB IBM
Value -40 -40 -5 -1.8 -2 -3 -300 -1
Unit V V V A A A mA A
Thermal Characteristics
Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range
Symbol PD
RθJA TJ, TSTG
Value 600 208
-55 to +150
Notes:
1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Operated under pulse conditions: duty cycle ≤ 20%, pulse width tp ≤ 30ms. 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Unit mW
°C/W °C
DSS5240V
Document number: DS31673 Rev. 2 - 2
1 of 5 www.diodes.com
March 2009
© Diodes Incorporated
NEW PRODUCT
DSS5240V
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
Min
-40 -40 -5
Collector Cutoff Current
ICBO
⎯
Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5)
DC Current Gain
ICES IEBO
hFE
⎯ ⎯
300 300 250 160 50
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
VCE(SAT)
RCE(SAT) VBE(SAT) VBE(ON)
Cobo fT
ton td tr toff ts tf
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
⎯ 150
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Typ
⎯ ⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
⎯ ⎯
60 20 40 167 140 27
Max
⎯ ⎯ ⎯ -100 -50 -100 -100
⎯ 800 ⎯ ⎯ ⎯ -120 -145 -250 -530 250 -1.1 -1
15 ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Unit Test Condition
.