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DSS5240V Dataheets PDF



Part Number DSS5240V
Manufacturers Diodes
Logo Diodes
Description PNP SURFACE MOUNT TRANSISTOR
Datasheet DSS5240V DatasheetDSS5240V Datasheet (PDF)

NEW PRODUCT DSS5240V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • "Green Device" (Note 2) Top View Bottom View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Volt.

  DSS5240V   DSS5240V



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NEW PRODUCT DSS5240V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • "Green Device" (Note 2) Top View Bottom View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Repetitive Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.003 grams (approximate) 1, 2, 5, 6 3 654 4 Device Schematic 123 Pin Out Configuration Symbol VCBO VCEO VEBO IC ICRP ICM IB IBM Value -40 -40 -5 -1.8 -2 -3 -300 -1 Unit V V V A A A mA A Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Operated under pulse conditions: duty cycle ≤ 20%, pulse width tp ≤ 30ms. 4. Device mounted on FR-4 PCB with minimum recommended pad layout. Unit mW °C/W °C DSS5240V Document number: DS31673 Rev. 2 - 2 1 of 5 www.diodes.com March 2009 © Diodes Incorporated NEW PRODUCT DSS5240V Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min -40 -40 -5 Collector Cutoff Current ICBO ⎯ Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain ICES IEBO hFE ⎯ ⎯ 300 300 250 160 50 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) Cobo fT ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 20 40 167 140 27 Max ⎯ ⎯ ⎯ -100 -50 -100 -100 ⎯ 800 ⎯ ⎯ ⎯ -120 -145 -250 -530 250 -1.1 -1 15 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit Test Condition .


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