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DXTA42 Dataheets PDF



Part Number DXTA42
Manufacturers Diodes
Logo Diodes
Description NPN SURFACE MOUNT TRANSISTOR
Datasheet DXTA42 DatasheetDXTA42 Datasheet (PDF)

DXTA42 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DXTA92) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • T.

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DXTA42 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DXTA92) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 54.8mg (approximate) 3E COLLECTOR 2,4 Top View C4 2 C 1B TOP VIEW Device Schematic 1 BASE 3 EMITTER Pin Out Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Symbol VCBO VCEO VEBO IC Value 300 300 6 500 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Symbol Min Typ Max Unit Test Conditions V(BR)CBO 300 ⎯ ⎯ V IC = 100μA, IE = 0 V(BR)CEO 300 ⎯ ⎯ V IC = 1mA, IB = 0 V(BR)EBO 6 ⎯ ⎯ V IE = 100μA, IC = 0 ICBO ⎯ ⎯ 0.1 μA VCB = 200V, IE = 0 IEBO ⎯ ⎯ 0.1 μA VEB = 6V, IC = 0 VCE(SAT) ⎯ ⎯ 0.5 V IC = 20mA, IB = 2mA VBE(SAT) ⎯ ⎯ 0.9 V IC = 20mA, IB = 2mA 25 IC = 1mA, VCE = 10V hFE 40 ⎯ ⎯ ⎯ IC = 10mA, VCE = 10V 40 IC = 30mA, VCE = 10V fT 50 ⎯ ⎯ MHz IC = 10mA, VCE = 20V, f = 100MHz Cobo ⎯ ⎯ 3 pF VCB = 20V, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. DXTA42 Document number: DS31158 Rev. 4 - 2 1 of 4 www.diodes.com December 2009 © Diodes Incorporated RθJA = 125°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) DXTA42 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector-Emitter Saturation Voltage v.


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