MOUNT TRANSISTOR. DXTA42 Datasheet

DXTA42 TRANSISTOR. Datasheet pdf. Equivalent

Part DXTA42
Description NPN SURFACE MOUNT TRANSISTOR
Feature DXTA42 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PN.
Manufacture Diodes
Datasheet
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DXTA42 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Pl DXTA42 Datasheet
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DXTA42
DXTA42
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DXTA92)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 54.8mg (approximate)
3E
COLLECTOR
2,4
Top View
C4 2 C
1B
TOP VIEW
Device Schematic
1
BASE
3
EMITTER
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
300
300
6
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
V(BR)CBO
300
V IC = 100μA, IE = 0
V(BR)CEO
300
V IC = 1mA, IB = 0
V(BR)EBO
6
⎯ ⎯ V IE = 100μA, IC = 0
ICBO
0.1 μA VCB = 200V, IE = 0
IEBO
0.1 μA VEB = 6V, IC = 0
VCE(SAT)
0.5 V IC = 20mA, IB = 2mA
VBE(SAT)
0.9 V IC = 20mA, IB = 2mA
25 IC = 1mA, VCE = 10V
hFE 40 ⎯ ⎯ ⎯ IC = 10mA, VCE = 10V
40 IC = 30mA, VCE = 10V
fT
50
MHz
IC = 10mA, VCE = 20V,
f = 100MHz
Cobo
3 pF VCB = 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
www.diodes.com
December 2009
© Diodes Incorporated



DXTA42
RθJA = 125°C
DXTA42
0.5
0.4
0.3
0.2
0.1
0
0.01
0.1
1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector-Emitter Saturation Voltage
vs. Collector Current
DXTA42
Document number: DS31158 Rev. 4 - 2
2 of 4
www.diodes.com
December 2009
© Diodes Incorporated





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