Document
DXTA42
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction • Complementary PNP Type Available (DXTA92) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 54.8mg (approximate)
3E
COLLECTOR 2,4
Top View
C4 2 C
1B TOP VIEW
Device Schematic
1 BASE
3 EMITTER Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
Symbol VCBO VCEO VEBO IC
Value 300 300 6 500
Unit V V V mA
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 1
125 -55 to +150
Unit W °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
V(BR)CBO
300
⎯
⎯ V IC = 100μA, IE = 0
V(BR)CEO
300
⎯
⎯ V IC = 1mA, IB = 0
V(BR)EBO
6
⎯ ⎯ V IE = 100μA, IC = 0
ICBO
⎯
⎯ 0.1 μA VCB = 200V, IE = 0
IEBO
⎯
⎯ 0.1 μA VEB = 6V, IC = 0
VCE(SAT)
⎯
⎯ 0.5 V IC = 20mA, IB = 2mA
VBE(SAT)
⎯
⎯ 0.9 V IC = 20mA, IB = 2mA
25 IC = 1mA, VCE = 10V
hFE 40 ⎯ ⎯ ⎯ IC = 10mA, VCE = 10V 40 IC = 30mA, VCE = 10V
fT
50
⎯
⎯
MHz
IC = 10mA, VCE = 20V, f = 100MHz
Cobo
⎯
⎯
3 pF VCB = 20V, f = 1MHz
Notes:
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4 www.diodes.com
December 2009
© Diodes Incorporated
RθJA = 125°C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
DXTA42
0.5 0.4
0.3 0.2
0.1
0
0.01
0.1
1
10 100 1,000
IC, COLLECTOR CURRENT (mA) Fig. 4 Collector-Emitter Saturation Voltage
v.