Document
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
BVCEO > -60V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current RSAT = 295mΩ for a Low Equivalent On-Resistance hFE characterized up to -2A for high current gain hold up Complementary NPN Type: FMMT491Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
A Product Line of Diodes Incorporated
FMMT591Q
60V PNP MEDIUM POWER TRANSISTOR IN SOT23
Mechanical Data
Case: SOT23 Case Material: molded plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208 Weight 0.008 grams (approximate)
SOT23
C E
BC
Top View
E
Device Symbol
Top View Pin-Out
B
Ordering Information (Notes 4 & 5)
Part Number FMMT591QTA
Compliance Automotive
Marking 591
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
591
591 = Product Type Marking Code
FMMT591Q
Document number: DS37010 Rev. 1 - 2
1 of 7 www.diodes.com
March 2014
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current
Symbol VCBO VCEO VEBO IC ICM IB
A Product Line of Diodes Incorporated
FMMT591Q
Value -80 -60 -7 -1 -2 -200
Unit V V V A A mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
(Note 6) (Note 6) (Note 7)
Symbol PD RθJA RθJL
TJ, TSTG
Value 500 250 197
-55 to +150
Unit mW °C/W °C/W °C
ESD Ratings (Note 8)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value 4,000 400
Unit JEDEC Class V 3A VC
Notes:
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT591Q
Document number: DS37010 Rev. 1 - 2
2 of 7 www.diodes.com
March 2014
© Diodes Incorporated
Thermal Characteristics and Derating Information
A Product Line of Diodes Incorporated
FMMT591Q
-IC Collector Current (A)
1 V
CE(sat)
Limit
100m
10m
DC 1s
100ms 10ms
15 x 15mm FR4
1ms
1oz Copper
100µs
1m 1
10 100
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
240 15 x 15mm FR4 1oz Copper
200
160 D=0.5
120
80 D=0.2 40
Single Pulse D=0.05
1000µ
1m
D=0.1 10m 100m 1
10
Pulse Width (s)
100
Transient Thermal Impedance
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
0.6 15 x 15mm FR4 1oz Copper
0.5 0.4 0.3 0.2 0.1 0.00 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
15 x 15mm FR4 1oz Copper 100
10
1
01.010µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
Thermal Resistance (°C/W)
FMMT591Q
Document number: DS37010 Rev. 1 - 2
3 of 7 www.diodes.com
March 2014
© Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Cut-Off Current
Symbol BVCBO BVCEO BVEBO
ICBO IEBO ICES
Static Forward Current Transfer Ratio (Note 9)
hFE
Min -80
-60
-7
—
—
—
100 100 80 15
Typ —
—
-8.1
<1
<1
<1
220 175 155 40
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9)
VCE(SAT)
VBE(SAT) VBE(ON)
—
— —
-155 -295
965
830
Transition Frequency
fT 15.