BC817-25W

Small Signal Product BC817-16W/25W/40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: SOT- 323 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 0.005 grams (approximately) SOT-323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range Notes: 1. Transistor mounted on a FR4 printed-circuit board PD VCBO VCEO VEBO IC RθJA TJ , TSTG 200 50 45 5 0.5 625 -55 to + 150 UNIT mW V V V A K/W °C PARAMETER SYMBOL Collector-Base Breakdown Voltage at IC = 10 µA Collector-Emitter Breakdown Voltage at IC = 10 mA Emitter-Base Breakdown Voltage at IE = 10 µA Collector Cut-off Current at VCB = 20 V Emitter Cut-off Current at VEB = 5 V Collector-Emitter Saturation Voltage at IC = 500mA IB = 50 mA Transition Frequency VCE = 5 V IC = 10 mA f = 100MHz at VCE = 1 V , IC = 100 mA -16W V(BR)CBO V(BR)CEO V(BR...