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BC817-16W Dataheets PDF



Part Number BC817-16W
Manufacturers SeCoS
Logo SeCoS
Description NPN Plastic Encapsulate Transistor
Datasheet BC817-16W DatasheetBC817-16W Datasheet (PDF)

Elektronische Bauelemente BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage PACKAGE INFORMATION Weight: 0.0074 g (approximately) MARKING BC817-16W: BC817-25W: BC817-40W: 6A 6B 6C , YM Collector   Base  Emitter SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.

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Elektronische Bauelemente BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage PACKAGE INFORMATION Weight: 0.0074 g (approximately) MARKING BC817-16W: BC817-25W: BC817-40W: 6A 6B 6C , YM Collector   Base  Emitter SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 -0.650 TYP. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 50 45 5 500 300 -55 ~ +150 CHARACTERISTICS at Ta = 25°C Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage DC Current Gain DC Current Gain Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE(1) hFE(2) Transition Frequency fT Collector Capacitance CC Min. 50 45 5 - 100 40 100 - Max. 0.1 0.1 0.7 1.2 1.2 600 - - 5 Unit V V V mA mW ℃ Unit Test Conditions V IC = 10 uA, IE = 0 V IC = 10 mA, IB = 0 V IE = 1 uA, IC = 0 uA VCB = 20V, IE = 0 uA VEB = 5V, IC = 0 V IC = 500mA, IB = 50 mA V IC = 500mA, IB = 50 mA V VCE = 1V, IC = 500mA VCE = 1 V, IC = 100 mA MHz pF VCE = 1 V, IC = 500 mA VCE = 5 V, IC = 10 mA, f = 100MHz VCB = 10V, f=1MHz CLASSIFICATION OF hFE(1) Rank Range BC817-16W 100 - 250 BC817-25W 160 - 400 BC817-40W 250 - 600 28-Jul-2010 Rev. C Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor 28-Jul-2010 Rev. C Page 2 of 2 .


BC817-40W BC817-16W BC817-25W


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