Document
SMD Type
TransistIoCrs
NPN General Purpose Transistor BC846W,BC847W,BC848W
Features
Low current (max. 100 mA). Low voltage (max. 65 V).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient
1 Emitter 2 Base 3 Collector
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a
BC846W BC847W BC848W 80 50 30 65 45 30 665 100 200 200 200 150 -65 to +150 -65 to +150 625
Unit V V V mA mA mA
mW
K/W
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SMD Type
TransistIoCrs
BC846W,BC847W,BC848W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC846W
DC current gain
BC847W,BC848W BC846AW,BC847AW
BC846BW,BC847BW
BC847CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02.
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = 30 V; IE = 0
15 nA
ICBO VCB = 30 V; IE = 0;Tj = 150
5 ìA
IEBO VEB = 5 V; IC = 0
100 nA
110 450
110 800
hFE IC = 2 mA; VCE = 5 V
110 180 220
200 290 450
420 520 800
IC = 10 mA; IB = 0.5 mA VCE(sat)
IC = 100 mA; IB = 5 mA; *
90 250 mV 200 600 mV
IC = 10 mA; IB = 0.5 mA VBE(sat)
IC = 100 mA; IB = 5 mA;*
700 mV 900 mV
IC = 2 mA; VCE = 5 V VBE
IC = 10 mA; VCE = 5 V
580 660 700 mV 770 mV
CC VCB = 10 V; IE = Ie = 0;f = 1 MHz
3 pF
fT VCE = 5 V; IC = 10 mA;f = 100 MHz 100
MHz
NF
IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz
10 dB
hFE Classification
TYPE Marking
BC846W 1D
TYPE Marking
BC847W 1H
TYPE Marking
BC848W 1M
BC846AW 1A
BC846BW 1B
BC847AW 1E
BC847BW 1F
BC847CW 1G
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