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1N5711W Dataheets PDF



Part Number 1N5711W
Manufacturers LGE
Logo LGE
Description Surface Mount Schottky Barrier Diode
Datasheet 1N5711W Datasheet1N5711W Datasheet (PDF)

1N5711W Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation SOD-123 Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion Mechanical Data 0.053(1.35) Max. 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0.100(2.55) Case: SOD-123, Plastic Polarity: Cathode Band Marking: Date Code and Type Code T.

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1N5711W Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation SOD-123 Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion Mechanical Data 0.053(1.35) Max. 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0.100(2.55) Case: SOD-123, Plastic Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SA Weight: 0.01 grams (approx.) 0.006(0.15) Typ. Min. 0.067(1.70) 0.055(1.40) 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol 1N5711W Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum Forward Current VRRM VRWM VR VR(RMS) IFM 70 49 15 V V mA Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Pd RθJA TJ, TSTG 250 600 -65 to + 175 mW K/W OC Type Number Reverse Breakdown Voltage Reverse Leakage Current IR=10uA VR=50V Symbol V(BR) IR Min 70 - Typ Max Units - -V - 200 nA Forward Voltage Drop Junction Capacitance IF=1.0mA IF=15mA VR=0, f=1.0MHz Reverse Recovery Time (Note 2) VF 70 - - 0.41 V - 1.0 Cj - - 2.0 pF trr - - 1.0 nS Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω. http://www.luguang.cn mail:[email protected] IF, INSTANTANEOUS FWD CURRENT (A) 1N5711W Surface Mount Schottky Barrier Diode RATINGS AND CHARACTERISTIC CURVES (1N5711W) FIG.1- TYPICAL FORWARD CHARACTERISTIC VARIATIONS FOR PRIMARY CONDUCTION mA 10 5 2 1 5 2 0.1 5 2 0.01 0 0.5 1V VF, INSTANTANEOUS FWD VOLTAGE (V) Cj, JUNCTION CAPACITANCE (pA) FIG.2- TYP. JUNCTION CAPACITANCE VS REVERSE VOLTAGE pF 2 Tj =25OC 1 0 0 10 20 30 40 50V VR, REVERSE VOLTAGE (V) FIG.3- TYPICAL REVERSE CHARACTERISTICS A 100 5 125OC 2 10 5 75OC 2 1 5 2 0.1 25OC 5 2 0.01 0 10 20 30 40 50V VR, REVERSE VOLTAGE (V) IR, INSTANTANEOUS REVERSE CURRENT (A) http://www.luguang.cn - 27 - mail:[email protected] .


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