SILICON PLANAR HIGH SPEED DIODES
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR HIGH SPEED DIO...
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR HIGH SPEED DIODES
3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE
12
BAS19, BAS20, BAS21
SOT-23 Formed SMD Package
Marking BAS19 = A8 BAS20 = A81 BAS21 = A82
High-Speed Switching Diodes in a Microminiature Plastic Envelope.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Continuous Reverse Voltage
VR
Repetitive Peak Reverse Voltage
VRRM
Non Repetitive Peak Forward Current
t=1µs t=1s
IFSM IFSM
Average Rectified Forward Current (averaged over any 20 ms period)
IF (AV)
Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation
*IF IFRM PD
Storage Temperature Range Junction Temperature
Tstg Tj
BAS19 100 120
BAS20 150 200
2.5 0.5
200
200 625 250 - 55 to +150 150
BAS21 200 250
UNIT V V
A A
mA
mA mA mW
oC oC
Thermal Resistance Junction to Ambient in free air
Rth (j-a)
500
K/W
ELECTRICAL CHARACTERISTICS DESCRIPTION Forward Voltage
Reverse Breakdown Voltage
(Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION
VF V(BR)R
IF=100mA IF=200mA IR=100µA **BAS19
BAS20
***BAS21
MIN TYP MAX 1.00 1.25
120 200 250
UNIT V V
V V V
*Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm **Measured under pulse conditions; pulse time = tp=0.3ms. ***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V
BAS19_21 Rev_1 050503E
Continental Device India Limited
Data Sheet
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