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BAS316WS

Taiwan Semiconductor

200mW High-Speed Switching SMD Diode

Small Signal Product BAS316WS Taiwan Semiconductor 200mW High-Speed Switching SMD Diode FEATURES - Fast switching devi...


Taiwan Semiconductor

BAS316WS

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Small Signal Product BAS316WS Taiwan Semiconductor 200mW High-Speed Switching SMD Diode FEATURES - Fast switching device (trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.6 ± 0.5 mg - Marking Code: W2 SOD-323F MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Average Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs Pulse Width = 1 ms PD IO IFRM 200 250 4.0 1.0 Operating Junction Temperature TJ 150 Storage Temperature Range TSTG -65 to + 150 PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Leakage Voltage Junction Capacitance Reverse Recovery Time IR = 100 μA IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V VR = 25 V VR = 0 , f = 1.0 MHz IF = IR = 10 mA , Irr = 0.1 × IR SYMBOL V(BR) VF IR CJ trr MIN 100 - - MAX - 0.715 0.855 1.000 1.250 1 0.03 1.5 4.0 UNIT mW mA A oC oC UNIT V V μA pF ns Document Number: DS_S1501001 Version: B15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Instant...




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