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BAS316

LGE

Silicon Epitaxial Planar Diodes

BAS316 Silicon Epitaxial Planar Diodes SOD-323 Features — Very small plastic SMD package. — High switching speed:max.4n...


LGE

BAS316

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BAS316 Silicon Epitaxial Planar Diodes SOD-323 Features — Very small plastic SMD package. — High switching speed:max.4ns — Continuous reverse voltage:max.100v — Repetitive peak reverse voltage:max.100v — Repetitive peak forward current:max.500mA Applications — Surface mount fast switching diode Ordering Information Type No. BAS316 Marking A6 Dimensions in inches and (millimeters) Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic DC Reverse Voltage Forward Current Power Dissipation Junction and Storage Temperature Rage Symbol VR IF Pd Tj,TSTG Value 100 300 200 -65 to+150 Unit V mA mW ℃ http://www.luguang.cn mail:[email protected] BAS316 Silicon Epitaxial Planar Diodes ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF Reverse Current IR Capacitance between terminals CT Reverse Recovery Time trr Min 100 0.62 - Max 0.715 0.855 1.0 1.25 1.0 0.03 1.5 4.0 Unit V V μA pF ns Test Condition IR=100μA IF=1.0mA IF=10mA IF=50mA IF=150mA VR=75V VR=25V VR=0,f=1.0MHz IF=IR=10mA,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified http://www.luguang.cn mail:[email protected] BAS316 Silicon Epitaxial Planar Diodes http://www.luguang.cn mail:[email protected] ...




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