BAS85

BAS85 Silicon Schottky Barrier Diode MINI MELF Features — For general applications — Low turn-on voltage — PN junction guard ring Mechanical Data — Glass case — Weight: 0.05g (approx) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Characteristic Continuous reverse voltage Forward continuous current* Peak forward current* Surge forward current* @ tp = 1s Power dissipation* @ TA = 65°C Junction temperature Operating temperature range Storage temperature range Symbol VR IF IFM IFSM Ptot Tj TA TSTG Dimension in millimeters Value 30 200 300 600 200 125 -65 to +125 -65 to +150 Unit V mA mA mA mW °C °C °C Electrical Characteristics @ Tj = 25°C unless otherwise specified Characteristic Reverse breakdown voltage 10 mA pulses Symbol V(BR)R * Valid provided that electrodes are kept at ambient temperature. Min 30 Typ — Max — Unit V http://www.luguang.cn mail:[email protected] BAS85 Silicon Schottky Barrier Diode Characteristics (Tj = 25_C unless otherwise specified) PR – Reverse Power Dissipation ( mW ) 200 180 160 140 120 100 80 60 40 20 0 25 15822 VR = 30 V RthJA= 540K/W PR–Limit @100%VR PR–Limit @80%VR 50 75 100 125 Tj – Junction Temperature ( °C ) 150 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature IF – Forward Current ( A ) 1000 100 10 Tj = 150°C Tj = 25°C 1 0.1 0...