BAS85

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES BAS85 FEATURES * Fast Switching Device(TRR<4.0nS) * Mini MELF Glass Case (SOD-80) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable SOD-80 .016(0.40) .008(0.20) ∅ .059(1.5) ∅ .055(1.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) RATINGS SYMBOL Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ TA=25OC Maximum Peak Forward Current @ TA=25OC Surge Forward Current @ tp<1s,TA=25OC Maximum Power Dissipation @ TA=65OC VR IF IFM IFSM PD Junction Temperature Storage Temperature Range TJ TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Reverse breakdown voltage (IR=10µA) V(BR)R Reverse voltage leakage current (VR=25V) IR (IF=0.1mA) (IF=1mA) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IR=1mA) VF CD trr .142(3.6) .134(3.4) Dimensions in inches and (millimeters) MIN. 30 - - - BAS85 30 200 300 600 200 125 -65 to + 150 TYP. - 0.5 - MAX. - 2 0.24 0.32 0.4 0.8 10 5 UNITS V mAmps mAmps mAm...