VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifi...
VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance
Schottky Rectifier, 15 A
2 1
3 D2PAK (TO-263AB)
Base cathode
2
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR
15 A 35 V, 40 V, 45 V
VF at IF IRM typ. TJ max.
0.50 V 70 mA at 125 °C
150 °C
EAS Package
16 mJ D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The VS-12TQ...S-M3
Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM IFSM VF
Range tp = 5 μs sine 15 Apk, TJ = 125 °C
TJ
Range
VALUES 15
35 to 45 990 0.50
-55 to +150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak rever...
