DatasheetsPDF.com

VS-12TQ035SHM3 Dataheets PDF



Part Number VS-12TQ035SHM3
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifier
Datasheet VS-12TQ035SHM3 DatasheetVS-12TQ035SHM3 Datasheet (PDF)

VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM max. TJ max. EAS Package Diode variation 15 A 35 V, 40 V, 45 V 0.50 V 70 mA at 125 °C 150 °C 16 mJ TO-263AB (D2PAK) Single die FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanic.

  VS-12TQ035SHM3   VS-12TQ035SHM3


Document
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM max. TJ max. EAS Package Diode variation 15 A 35 V, 40 V, 45 V 0.50 V 70 mA at 125 °C 150 °C 16 mJ TO-263AB (D2PAK) Single die FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201, class 1 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-12TQ...SHM3 Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM Rectangular waveform Range tp = 5 μs sine VF 15 Apk, TJ = 125 °C TJ Range VALUES 15 35 to 45 990 0.50 -55 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-12TQ035SHM3 35 VS-12TQ040SHM3 40 VS-12TQ045SHM3 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TC = 120 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 15 990 250 16 2.4 UNITS A A mJ A Revision: 24-Feb-15 1 Document Number: 95853 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 15 A 30 A TJ = 25 °C 15 A 30 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.56 0.71 0.50 0.64 1.75 70 900 8.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range Maximum thermal resistance,  junction to case Typical thermal resistance,  case to heatsink TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style D2PAK VALUES -55 to +150 UNITS °C 2.0 °C/W 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf · in) 12TQ030SH 12TQ040SH 12TQ045SH Revision: 24-Feb-15 2 Document Number: 95853 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors 1000 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IR - Reverse Current (mA) 1000 100 TJ = 150 °C 10 1 0.1 0.01 TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.001 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 TJ = 25 °C CT - Junction Capacitance (pF) ZthJC - Thermal Impedance (°C/W) 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 D = 0.50 D = 0.33 D = 0.25 0.01 D = 0.17 D = 0.08 0.001 0.00001 Single pulse (thermal resistance) P DM t 1 t 2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 .


VS-12TQ045-N3 VS-12TQ035SHM3 VS-12TQ040SHM3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)