VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
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Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
Base cathode
2
D2PAK
1 N/C
3 Anode
PRODUCT SUMMARY
IF(AV) VR VF at IF IRM max. TJ max. EAS Package Diode variation
15 A 35 V, 40 V, 45 V
0.50 V 70 mA at 125 °C
150 °C 16 mJ TO-263AB (D2PAK) Single die
FEATURES
• 150 °C TJ operation • Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD 201, class 1 whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The VS-12TQ...SHM3 Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM
Rectangular waveform Range tp = 5 μs sine
VF 15 Apk, TJ = 125 °C
TJ Range
VALUES 15
35 to 45 990 0.50
-55 to +150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak reverse voltage
VR VRWM
VS-12TQ035SHM3 35
VS-12TQ040SHM3 40
VS-12TQ045SHM3 45
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 15 990 250 16 2.4
UNITS A
A mJ A
Revision: 24-Feb-15
1 Document Number: 95853
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage current See fig. 2
IRM (1)
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
15 A 30 A
TJ = 25 °C
15 A 30 A
TJ = 125 °C
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.56 0.71 0.50 0.64 1.75 70 900 8.0
10 000
UNITS
V
mA pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink
TJ, TStg RthJC RthCS
DC operation See fig. 4
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style D2PAK
VALUES -55 to +150
UNITS °C
2.0 °C/W
0.50
2g
0.07 oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
12TQ030SH 12TQ040SH 12TQ045SH
Revision: 24-Feb-15
2 Document Number: 95853
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 150 °C 10 TJ = 125 °C
TJ = 25 °C
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
IR - Reverse Current (mA)
1000
100 TJ = 150 °C
10 1
0.1 0.01
TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C
0.001 0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
CT - Junction Capacitance (pF)
ZthJC - Thermal Impedance (°C/W)
100 0
10 20 30 40 50
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1 D = 0.50 D = 0.33 D = 0.25
0.01 D = 0.17 D = 0.08
0.001 0.00001
Single pulse (thermal resistance)
P DM
t
1
t
2
Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
.