RU20P5E

RU20P5E P-Channel Advanced Power MOSFET Features -20V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description SDG Applications Load Switch Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.2 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -20 A -5 A -3.9 1.25 W 0.8 10 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 1 www.ruichips.com RU20P5E Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P5E Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, V...