RU2H50S

RU2H50S N-Channel Advanced Power MOSFET MOSFET Features 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175°C Operating Temperature Lead Free,RoHS compliant Pin Description TO-263 Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Rating 200 ±25 175 -55 to 175 60 ① 230 ② 60 ② 45 312 156 0.48 Unit V °C °C A A A W °C/W 140 mJ www.ruichips.com RU2H50S Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H50S Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=28A 200 2 V 1 µA 30 34V ±100 nA 36 43 mΩ Diode Ch...