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BAT54CD

Taiwan Semiconductor

200mW Surface Mount Schottky Barrier Diode

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode FEATURES - Fas...


Taiwan Semiconductor

BAT54CD

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Description
BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA SOT-363 - Case: SOT-363 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 0.006 gram (approximately) - Marking Code: KLA, KL6, KL7, KL8, KLB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Forward Surge Current @ t < 1.0 s Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage temperature VRRM VRWM VR IF IFRM IFSM PD RθJA Tj , TSTG 30 200 300 600 200 625 -55 to 125 UNIT V mA mA mA mW °C/W oC PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time IR=100µA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1.0MHz IF=IR=10mA, RL=100Ω, IRR=1mA SYMBOL V(BR) VF IR CT trr MIN 30 -------- MAX -0.32 0.40 0.50 1.00 2.0 1...




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