BAT54CW

BAT54W/AW/CW/SW Taiwan Semiconductor 200mA, 30V Schottky Barrier Diode FEATURES ● Fast switching speed ● Low forward voltage ● Surface mount device type ● Ultra high-speed switching ● Voltage clamping ● Protection circuits ● High temperature soldering guaranteed: 260°C/10s ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 200 mA 30 V IFSM 600 mA TJ MAX 125 °C Package SOT-323 APPLICATIONS ● Voltage clamping ● Ultra high-speed switching ● Reverse polarity protection MECHANICAL DATA ● Case: SOT-323 ● Weight: 5.00mg (approximately) SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Repetitive peak reverse voltage VRRM 30 Forward current IF 200 Power dissipation PD 200 Peak Forward Surge Current (tp = 10ms) IFSM 600 Repetitive Peak Forward Current IFRM 300 Junction temperature TJ 125 Storage temperature TSTG -55 to +150 UNIT V mA mW mA mA °C °C 1 Version: D2102 BAT54W/AW/CW/SW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 625 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 0.1mA IF = 1.0mA Forward Voltage IF = 10mA VF IF = 30mA IF = 100mA Reverse current VR = 25V IR Junction capacitance Reverse Recovery Time VR = 1V, f = 1.0MHz CJ IF = 10 mA through IR ...