BAV100 Diodes Datasheet

BAV100 Datasheet PDF, Equivalent


Part Number

BAV100

Description

Hermetically Sealed Glass High Voltage Switching Diodes

Manufacture

Taiwan Semiconductor

Total Page 4 Pages
Datasheet
Download BAV100 Datasheet


BAV100
Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
PD
VRRM
IF(AV)
IFSM
500
250
200
1.0
4.0
Operating and Storage Temperature Range
TJ , TSTG
-65 to +200
Electrical Characteristics
PARAMETER
SYMBOL
Breakdown Voltage
Forward Voltage
Peak Reverse Current
BAV100 IR = 100 μA
BAV101 IR = 100 μA
BAV102 IR = 100 μA
BAV103 IR = 100 μA
IF = 100 mA
BAV100 VR = 50 V
BAV101 VR = 100 V
BAV102 VR = 150 V
BAV103 VR = 200 V
BV
VF
IR
Thermal Resistance, Junction to Ambient
RθJA
Junction Capacitance
VR = 0 , f = 1.0 MHz
CJ
Reverse Recovery Time
(Note)
trr
Notes : Reverse recovery test conditions : IF = IR = 30 mA , Irr = 30 mA , RL = 100
MIN
MAX
60
120
200
-
250
- 1.0
100
- 100
100
100
350
- 5.0
- 50
UNIT
mW
V
mA
A
oC
UNIT
V
V
nA
oC/W
pF
ns
Document Number: DS_S1501002
Version: B15

BAV100
Small Signal Product
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
BAV100/101/102/103
Taiwan Semiconductor
1000
Fig. 1 Reverse Current VS. Junction Temperature
100
Scattering Limit
10
1
VR = VRRM
0.1
0.01
0
40 80 120 160
Tj - Junction Temperature (oC)
200
1000
100
10
1
0.1
0
Fig. 2 Forward Current VS. Forward Voltage
Tj=25oC
Scattering Limit
0.4 0.8 1.2 1.6
VF - Forward Voltage (V)
2
Fig. 3 Differential Forward Resistance VS. Forward Current
1000
100
10
1
0.1
1 10
IF - Forward Current (mA)
100
Document Number: DS_S1501002
Version: B15


Features Small Signal Product CREAT BY ART BAV1 00/101/102/103 Taiwan Semiconductor He rmetically Sealed Glass High Voltage Sw itching Diodes FEATURES - High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resist ant and leads are readily solderable - RoHS compliant MINI MELF MECHANICAL D ATA - Polarity: Indicated by black cath ode band MAXIMUM RATINGS AND ELECTRICA L CHARACTERISTICS (TA=25℃ unless othe rwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reve rse Voltage Average Rectified Forward C urrent Non-Repetitive Peak Forward Surg e Current Pulse Width = 1.0 s Pulse Wi dth = 1.0 μs PD VRRM IF(AV) IFSM 500 250 200 1.0 4.0 Operating and Storage Temperature Range TJ , TSTG -65 to + 200 Electrical Characteristics PARAME TER SYMBOL Breakdown Voltage Forward Voltage Peak Reverse Current BAV100 IR = 100 μA BAV101 IR = 100 μA BAV102 IR = 100 μA BAV103 IR = 100 μA.
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