BAV100 DIODES Datasheet

BAV100 Datasheet PDF, Equivalent


Part Number

BAV100

Description

HIGH SPEED SILICON DIODES

Manufacture

CDIL

Total Page 3 Pages
Datasheet
Download BAV100 Datasheet


BAV100
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101
BAV102, BAV103
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,
Digital Voltmeters and Video Output Stages in Colour Television
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current t=1 s
t=1 µs
Power Dissipation up to Ta=25ºC
Storage Temperature
Junction Temperature
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL
VR
VRRM
IF (AV)
IF
IFRM
IFSM
IFSM
Ptot
Tstg
Tj
BAV100
50
60
Rth (j-a)
BAV101
100
120
BAV102
150
200
250
250
625
1
5
400
- 65 to +175
175
BAV103
200
250
0.375
UNIT
V
V
mA
mA
mA
A
A
mW
ºC
ºC
K/mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=100mA
IF=200mA
Reverse Breakdown Voltage
*VBR
IR=100µA
BAV100
BAV101
BAV102
BAV103
Reverse Current
IR VR= VR max
VR= VR max, Tj=150ºC
Differential Resistance
rdiff IF=10mA
MIN MAX UNIT
1.00 V
1.25 V
60
120
200
250
100
100
Typ 5
V
V
V
V
nA
µA
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
Cd VR=0V, f=1MHz
5 pF
trr IF=30mA, to IR=30mA
RL=100
50 ns
Measured @ IR=3mA
.
* @ Zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited @ 275V
BAV100_103Rev141002E
Continental Device India Limited
Data Sheet
Page 1 of 3

BAV100
BAV100, BAV101
BAV102, BAV103
SOD - 80C
Mini MELF (LL-34)
SOD 80C (LL-34) Mini MELF Hermetically Sealed Glass Package
± 0.05
0.35
± 0.20
3.50
± 0.05
0.35
Identification Label
Part Number
Date Code
Quantity
10.4
8.4
±0.5
1.5
Cathode band
All Dimensions are in mm
TAPE & REEL
2.5
MAX
De-reeling direction
±0.2
2.0
0.3
MAX
ø1.6
ø1.4
180
120°
Reel ø
No. of Device
180 mm (7")
2,500
All Dimensions are in mm
2.0
1.4
Notes:
1. Maximum of 0.5% of the total number of components per
reel may be missing-exclusively at the beginning and at
the end of the reel.
2. A maximum of three consecutive components may be
missing, provided this gap is followed by six consecutive
components.
De-reeling direction
300mm (75 empty
compartments)
Tape leader/carrier leader
160cmommp(4a0rtmemenpttsy)
Carrier trailer
All Dimensions are in mm
Drawings are not to scale
Packing Detail
PACKAGE
STANDARD PACK
INNER CARTON BOX
Details
Net Weight/Qty Size
Qty
SOD-80C T&R 2.5K/reel
225 gm/2.5K pcs 9" x 9" x 9"
40K
OUTER CARTON BOX
Size Qty Gr Wt
18" x 12" x 10"
19" x 19" x 20"
80K 7.2 kgs
320K 28.8 kgs
BAV100_103Rev141002E
Continental Device India Limited
Data Sheet
Page 2 of 3


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a white band Hermetica lly Sealed, Glass Silicon Diodes Intend ed for Switching and General Purposes i n Industrial Equipment e.g. Oscilloscop es, Digital Voltmeters and Video Output Stages in Colour Television ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Curr ent Forward Current (DC) Repetitive Pea k Forward Current Non Repetitive Peak F orward Current t=1 s t=1 µs Power Diss ipation up to Ta=25ºC Storage Temperat ure Junction Temperature THERMAL RESIST ANCE Junction to Ambient in free air S YMBOL VR VRRM IF (AV) IF IFRM IFSM IFSM Ptot Tstg Tj BAV100 50 60 Rth (j-a) BAV101 100 120 BAV102 150 200 250 250 625 1 5 400 - 65 to +175 175 BAV10 3 200 250 0.375 UNIT V V mA mA mA A A mW ºC ºC K/mW ELECTRICAL.
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