SMD Type
Transistors
PNP Transistor
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Features
Ideally ...
SMD Type
Transistors
PNP Transistor
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Features
Ideally suited for automatic insertion For Switching and AF Amplifier Applications
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
KC856 KC857 KC858 KC856 KC857 KC858
Symbol
VCBO
VCEO
VEBO IC PC TJ Tstg
Rating -80 -50 -30 -65 -45 -30 -5 -0.1 200 150
-65 to +150
Unit V
V V A mW
0-0.1 +0.10.38
-0.1
1.Base 2.Emitter 3.collector
www.kexin.com.cn 1
SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage
KC856 KC857
Symbol
Testconditons
VCBO Ic= -10ìA, IE=0
Min Typ Max Unit -80 -50 V
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance
KC858
KC856
KC857
VCEO Ic= -10 mA, IB=0
KC858
VEBO IE= -10ìA, IC=0
KC856
VCB= -70 V , IE=0
KC857
ICBO VCB= -45 V , IE=0
KC858
VCB= -25 V , IE=0
KC856
VCE= -60 V , IB=0
KC857
ICEO VCE= -40 V , IB=0
KC858
...