BC858A

SMD Type Transistors PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature KC856 KC857 KC858 KC856 KC857 KC858 Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -80 -50 -30 -65 -45 -30 -5 -0.1 200 150 -65 to +150 Unit V V V A mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type Transistors KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage KC856 KC857 Symbol Testconditons VCBO Ic= -10ìA, IE=0 Min Typ Max Unit -80 -50 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance KC858 KC856 KC857 VCEO Ic= -10 mA, IB=0 KC858 VEBO IE= -10ìA, IC=0 KC856 VCB= -70 V , IE=0 KC857 ICBO VCB= -45 V , IE=0 KC858 VCB= -25 V , IE=0 KC856 VCE= -60 V , IB=0 KC857 ICEO VCE= -40 V , IB=0 KC858 ...