BC858A

SMD General Purpose Transistor (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) BC856/BC857/BC858 SOT-23 Marking Information Marking Code BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol -VCBO -VCEO -VEBO -IC Ptot TJ TSTG Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range BC856 BC857 BC858 Unit Conditions 80 50 30 V 65 45 30 V 555 V 100 mA 350 mW Note 1 150 ° C -55 to +150 °C Note: 1. Package mounted on 99.5% Alumina 10 x 8 x 0.6mm. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415 Rev. A/AH 2008-05-29 Page 1 of 3 SMD General Purpose Transistor (PNP) BC856/BC857/BC858 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description -ICBO hFE Collector-Emitter Cut-off Current BC856/7/8, Suffix ‘A’ BC856/7/8, Suffix ‘B’ D.C. Current Gain BC857/8, Suffix ‘C’ BC856/7/8, Suffix ‘A’ BC856/7/8, Suffix ‘B’ BC857/8, Suffix ‘C’ -VCE(sat) Collector-Emitter Saturation Voltage -VBE(sat) Base-Emitter Saturation Voltage ...