BCW68

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. BCW68 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC * Tj Tstg -60 -45 -5 -800 800 350 150 -55 150 * : Package Mounted On 99.9% Alumina 10 8 0.6mm. UNIT V V V mA mA mW E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 MARK SPEC TYPE BCW68F BCW68G MARK DF DG Marking hFE Rank Type Name Lot No. 1998. 6. 15 Revision No : 1 1/2 BCW68 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CEO V(BR)EBO Collector Cut-off Current ICES Emitter Cut-off Current DC Current Gain Group F Group G Group F Group G Group F Group G IEBO hFE Base-Emitter Saturation Voltage VBE(sat) Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Collector Input Capacitance Noise Figure VCE(sat) fT Cob Cib NF TEST CONDITION IC=-10mA, IB=0 IE=10 A, IC=0 VEB=0V, VCE=-45V Ta=150 , VEB=0V, VCE=-45V IC=0, VEB=-4V VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA VCE=-1...