Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW67, A, B, C BCW68, F, G, H
GENERAL PURPOSE TRANSISTOR
P–N–P transistor
Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain
IC = 10 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H
IC = 100 mA; VCE = 1 V
BCW67A, 68F
BCW67B, 68G
–VCBO –VCEO –VEBO –IC Ptot hFE hFE hFE hFE hFE
BCW 67series 68 series
max. 45
60 V
max. 32
45 V
max.
5V
max.
800 mA
max
225 mW
min. min. min.
min. max. min. max.
75 120 180
100 250 160 400
Continental Device India Limited
Data Sheet
Page 1 of 3
BCW67, A, B, C BCW68, F, G, H
BCW67C, 68H
IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H
hFE
min. max.
hFE min. hFE min. hFE min.
250 630
35 60 100
RATINGS (at TA = 25°C unless otherwise specified) Limiting values
Collector–base voltage (open emitter)
–VCBO
Collector–emitter voltage (open base)
–VCEO
Emitter–base voltage (open collector)
–VEBO
Collector current (d.c.)
–IC
Total power dissipation at Tamb = 25°C Ptot
Storage temperature
Tstg
max. max. max. max. max
45 60 32 45
5 800 225 –55 to +150
V V V mA mW °C
THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance
from junction to ambient
Rth j–a 556 556 556
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
BCW67 series
68 series
IC = 10 mA; IB = 0 IC = 10 mA; VEB = 0 Emitter–base breakdown voltage
V(BR)CEO min. 32 V(BR)CES min. 45
45 V 60 V
IE = 10 mA; IC = 0 Collector cut–off current
V(BR)EBO min.
5V
VCE = 32 V; IE = 0 V VCE = 45 V; IE = 0 V VCE = 32 V; IE = 0 V; TA = 150°C VCE = 45 V; IE = 0 V; TA = 150°C Emitter cut–off current
ICES ICES ICES ICES
max. max. max. max.
20 – 10 –
– nA 20 nA – mA 10 mA
VEB = 4 V; IC =0 Output capacitance at f = 1 MHz
IEBO
max.
20 nA
IE = 0; VCB = 10 V Input capacitance at f = 1 MHz
Cc max.
18 pF
IC = 0; VEB = 0.5 V
Ce max.
105 pF
Saturation voltages IC = 300 mA; IB = 30 mA IC = 500 mA; IB = 50 mA
Noise figure at RS = 1 kW IC = 0.2 mA; VCE = 5 V f = 1 KHz, BW = 200 Hz
Transition frequency at f = 100 MHz IC = 20 mA; VCE = 10 V
VCEsat max. –VBEsat max.
NF max. fT min.
1.5 V 2V
10 dB 100 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail
[email protected] www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
.