RU30C8H

RU30C8H Complementary Advanced Power MOSFET Features N-Channel 30V/8A, RDS (ON) =12mΩ(Typ.) @ VGS=10V RDS (ON) =16mΩ(Typ.) @ VGS=4.5V P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ.) @ VGS=-10V RDS (ON) =25mΩ (Typ.) @ VGS=-4.5V Reliable and Rugged ESD Protected Lead Free and Green Devices Available (RoHS Compliant) Applications Load Switch Pin Description D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S1 S2 Complementary MOSFET N-Channel P-Channel Unit TA=25°C 30 -30 ±12 ±12 150 150 -55 to 150 -55 to 150 2.7 -2.5 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 32 8 6.5 2 1.3 TBD 62.5 -28 -7 -5.6 2 1.3 TBD 62.5 A A W °C/W °C/W TBD TBD mJ Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU30C8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30C8H Min. Typ. Max. Static Characteristics BVDSS VGS=0V, IDS=250µA Drain-Source Breakdown Voltage...