RU30E40L

RU30E40L N-Channel Advanced Power MOSFET MOSFET Features 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management. Pin Description TO252 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Rating 30 ±16 175 -55 to 175 ① 60 ② 240 ① 60 ① 43 52 26 2.9 Unit V °C °C A A A W °C/W 100 mJ www.ruichips.com RU30E40L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30E40L Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V ...