P-Channel Advanced Power MOSFET
RU30P3B
P-Channel Advanced Power MOSFET
Features
• -30V/-3.5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-...
Description
RU30P3B
P-Channel Advanced Power MOSFET
Features
-30V/-3.5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-4.5V
Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Applications
Load Switch
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC RθJA③
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TA=25°C
-30 ±20 150 -55 to 150 -1
V
°C °C A
TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C
-14 A
-3.5 A
-2.8
1 W
0.64
- °C/W
125 °C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013
1
www.ruichips.com
RU30P3B
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU30P3B Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
VDS=-30V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
⑤
RDS(ON)
...
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