RU30P5H

RU30P5H P-Channel Advanced Power MOSFET MOSFET Features -30V/-5.5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =55mΩ (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOP-8 Applications Power Management. Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -30 ±20 150 -55 to 150 -3.1 ① -22 -5.5 -4.5 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 www.ruichips.com RU30P5H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30P5H Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=-250µA VDS=-30V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V -30 -1 ③ RDS(ON) Drain-Source On-state Resistance VGS=-10V, IDS=-5.2A VGS=-4.5V, IDS=-2A V -1 -30 -1.8 -2.5 ±100 µA V nA 38 45 mΩ 55 75 mΩ Diode Characteristics ③ VSD Diod...