N-Channel Advanced Power MOSFET
RU40E32L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/45A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =15mΩ(tpy.)@VG...
Description
RU40E32L
N-Channel Advanced Power MOSFET
MOSFET
Features
40V/45A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =15mΩ(tpy.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Power Management.
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
40 ±16 175 -55 to 175 45
①
180
②
45 32 52 26 2.9
90
Unit
V °C °C A
A A
W °C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012
www.ruichips.com
RU40E32L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU40E32L Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
VGS=0V, IDS=250µA VDS= 40V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V
40 1.0
V 1
µA 30 2.5 V ±10 µA
④
RDS(ON)
Drain-Source...
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