RU40E25L

RU40E25L N-Channel Advanced Power MOSFET MOSFET Features 40V/25A, RDS (ON) =26mΩ(tpy.)@VGS=10V RDS (ON) =38mΩ(tpy.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management. Pin Description TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 40 ±20 175 -55 to 175 25 ① 100 ② 25 19 40 20 3.75 40 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 www.ruichips.com RU40E25L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40E25L Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 40 V IDSS Zero Gate Voltage Drain Current VDS= 40V, VGS=0V TJ=85°C 1 µA 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 2 2.7 V IGSS Gate Leakage Current VGS=±16V, VDS=0V ±10 µA ④ RDS(ON) ...