RU55111R

RU55111R N-Channel Advanced Power MOSFET MOSFET Features 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V RDS (ON) =7mΩ(tpy.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Pin Description TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 Rating 55 ±20 175 -55 to 175 ① 110 ② 420 ① 110 ① 88 176 88 0.85 Unit V °C °C A A A W W °C/W 506 mJ www.ruichips.com RU55111R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55111R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS= 55V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V ④ RDS(ON) Drain-Source On-state Res...