RU60C20R5

RU60C20R5 Complementary Advanced Power MOSFET Features N-Channel 60V/20A, RDS (ON) =30mΩ(Typ.) @ VGS=10V P-Channel -60V/-15A, RDS (ON) =110mΩ (Typ.) @ VGS=-10V Reliable and Rugged ESD Protected Lead Free and Green Available Applications Power Management Pin Description D1/D2 S2G2 G1S1 TO220-5 D2/D1 G2 G1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S2 S1 Complementary MOSFET N-Channel P-Channel Unit TC=25°C 60 -60 ±16 ±16 175 175 -55 to 175 -55 to 175 20 -15 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 80 20 16 50 25 3 62.5 -60 A -15 A -10 50 W 25 3 °C/W 62.5 °C/W 42 72 mJ Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 1 www.ruichips.com RU60C20R5 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VGS=0V, IDS=-250µA VDS=60V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VDS=-60V, VGS=0V VGS(th) Gate Threshold V...