RU60P60R

RU60P60R P-Channel Advanced Power MOSFET Features -60V/-60A, RDS (ON) =22mΩ(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Inverters Pin Description G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -60 ±20 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -240 -60 -42 176 88 0.85 62.5 A A W °C/W °C/W 756 mJ Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 1 www.ruichips.com RU60P60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU60P60R Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-60V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate ...