RU6H2R

Features 600V/2A, RDS (ON) =4Ω (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Available RU6H2R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 Rating 600 ±30 150 -55 to 150 2 ① 8 ① 2 ① 1.2 62.5 25 2.0 9 Unit V °C °C A A A W °C/W mJ www.ruichips.com RU6H2R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H2R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ③ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=600V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS=10V, IDS=1A 600 2 V 1 ...