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RU6H2K Dataheets PDF



Part Number RU6H2K
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU6H2K DatasheetRU6H2K Datasheet (PDF)

RU6H2K N-Channel Advanced Power MOSFET Features • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V • Gate charge minimized • Low Crss( Typ. 5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • High efficiency switch mode power supplies • Lighting Pin Description GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage.

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RU6H2K N-Channel Advanced Power MOSFET Features • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V • Gate charge minimized • Low Crss( Typ. 5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • High efficiency switch mode power supplies • Lighting Pin Description GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 600 ±30 150 -55 to 150 2 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 8A 2 A 1.2 56 W 22 2.2 °C/W 100 °C/W 34 mJ Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RU6H2K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H2K Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=600V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±30V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=1A Diode Characteristics 600 1 30 234 ±100 4000 5000 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=2A, VGS=0V ISD=2A, dlSD/dt=100A/µs 1.2 190 0.77 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=300V, Frequency=1.0MHz VDD=300V, RL=150Ω, IDS=2A, VGEN=10V, RG=25Ω 8 280 45 5 10 25 20 25 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=480V, VGS=10V, IDS=2A 9 1.7 4.5 Unit V µA V nA mΩ V ns µC Ω pF ns nC Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 2 www.ruichips.com ℃ RU6H2K Ordering and Marking Information Device RU6H2K Marking RU6H2K Package Packaging Quantity Reel Size Tape width TO251 Tube 75 - - Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 3 www.ruichips.com ℃ RU6H2K Typical Characteristics Power Dissipation 60 Drain Current 3 50 ID - Drain Current (A) PD - Power (W.


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