Document
RU6H2K
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
• Gate charge minimized • Low Crss( Typ. 5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High efficiency switch mode power supplies • Lighting
Pin Description
GDS TO251
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
600 ±30 150 -55 to 150
2
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
8A
2 A
1.2
56 W
22
2.2 °C/W
100 °C/W
34 mJ
Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013
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RU6H2K
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU6H2K Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=600V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±30V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=1A
Diode Characteristics
600 1 30
234 ±100
4000 5000
④
VSD trr
Qrr
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ISD=2A, VGS=0V ISD=2A, dlSD/dt=100A/µs
1.2 190 0.77
Dynamic Characteristics⑤
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charge Characteristics⑤
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=300V, Frequency=1.0MHz
VDD=300V, RL=150Ω, IDS=2A, VGEN=10V, RG=25Ω
8 280 45
5 10 25 20 25
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=480V, VGS=10V, IDS=2A
9 1.7 4.5
Unit
V µA V nA mΩ V ns µC Ω pF
ns
nC
Notes:
①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013
2
www.ruichips.com
℃
RU6H2K
Ordering and Marking Information
Device
RU6H2K
Marking
RU6H2K
Package Packaging Quantity Reel Size Tape width
TO251
Tube
75
-
-
Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013
3
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℃
RU6H2K
Typical Characteristics
Power Dissipation
60
Drain Current
3
50
ID - Drain Current (A)
PD - Power (W.