N-Channel Advanced Power MOSFET
Features
• 150V/80A,
RDS (ON) =31mΩ(Typ.)@VGS=10V
• Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices ...
Description
Features
150V/80A,
RDS (ON) =31mΩ(Typ.)@VGS=10V
Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available
RU80N15S
N-Channel Advanced Power MOSFET Pin Description
D
Applications
Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
150 ±25 175 -55 to 175 80
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
300 A
80 A
60
176 W
88
0.85 °C/W
62.5 °C/W
169 mJ
Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013
1
www.ruichips.com
RU80N15S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU80N15S Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=150V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Cu...
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