Document
RU8048S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 80V/48A, RDS (ON) =13mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-263
Applications
• DC-DC Converters and Off-line UPS • Automotive Load Control • Electronic Power Steering System
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
80 ±25 175 -55 to 175 48
①
192
②
48 41 111 56 1.35
330
Unit
V °C °C A
A A W W °C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011
www.ruichips.com
RU8048S
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU8048S Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS=80V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V
VGS= 10V, IDS=30A
80 2
V 1
µA 10 34V ±100 nA 13 16 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time
td(OFF) Turn-off Delay Time tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
ISD=30A, VGS=0V
ISD=30A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 35V, Frequency=1.0MHz
VDD=40V, RL=30Ω, IDS=30A, VGEN= 10V, RG=4.7Ω
VDS=64V, VGS= 10V, IDS=30A
0.8 1.2 V 34 ns 29 nC
1.8 1872 281
92 11 54 30 22
Ω pF
ns
36 10 nC 9
Notes:
Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =23A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011
2
www.ruichips.com
Typical Characteristics
Power Dissipation
RU8048S
Drain Current
ID - Drain Current (A)
Ptot - Power (W)
Tj - Junction Temperature (°C) Safe Operation Area
Tj - Junction Temperature (°C) Thermal Transient Impedance
Normalized Effective Transient
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A–.