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RU8048S Dataheets PDF



Part Number RU8048S
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU8048S DatasheetRU8048S Datasheet (PDF)

RU8048S N-Channel Advanced Power MOSFET MOSFET Features • 80V/48A, RDS (ON) =13mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications • DC-DC Converters and Off-line UPS • Automotive Load Control • Electronic Power Steering System Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Sour.

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RU8048S N-Channel Advanced Power MOSFET MOSFET Features • 80V/48A, RDS (ON) =13mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications • DC-DC Converters and Off-line UPS • Automotive Load Control • Electronic Power Steering System Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 80 ±25 175 -55 to 175 48 ① 192 ② 48 41 111 56 1.35 330 Unit V °C °C A A A W W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 www.ruichips.com RU8048S Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8048S Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=80V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=30A 80 2 V 1 µA 10 34V ±100 nA 13 16 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 35V, Frequency=1.0MHz VDD=40V, RL=30Ω, IDS=30A, VGEN= 10V, RG=4.7Ω VDS=64V, VGS= 10V, IDS=30A 0.8 1.2 V 34 ns 29 nC 1.8 1872 281 92 11 54 30 22 Ω pF ns 36 10 nC 9 Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =23A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 2 www.ruichips.com Typical Characteristics Power Dissipation RU8048S Drain Current ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (°C) Safe Operation Area Tj - Junction Temperature (°C) Thermal Transient Impedance Normalized Effective Transient ID - Drain Current (A) VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Copyright© Ruichips Semiconductor Co., Ltd Rev. A–.


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