N-Channel Advanced Power MOSFET
RU8099
N-Channel Advanced Power MOSFET
Features
• 90V/90A RDS (ON)=8mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extr...
Description
RU8099
N-Channel Advanced Power MOSFET
Features
90V/90A RDS (ON)=8mΩ(Typ.) @ VGS=10V
Ultra Low On-Resistance
Extremely high dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
Applications
·High efficiency switching mode
power supply
Pin Description
TO-220
TO-220F
TO-247
TO-263
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
90 ±25 175 -55 to 175
①
90
360
①
90 65 175 86 0.86 62.5
1306
Unit
V °C °C A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010
www.ruichips.com
RU8099
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU8099 Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS= 90V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0...
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