RU8099R

RU8099 N-Channel Advanced Power MOSFET Features 90V/90A RDS (ON)=8mΩ(Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Applications ·High efficiency switching mode power supply Pin Description TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 90 ±25 175 -55 to 175 ① 90 360 ① 90 65 175 86 0.86 62.5 1306 Unit V °C °C A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com RU8099 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8099 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS= 90V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0...